8 April 1996 DLTS study in GaAs1-xSbx
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Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996); doi: 10.1117/12.238145
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland
Abstract
In the present paper we have shown the results of our DLTS studies in GaAs0.945Sb0.055 LPE semiconducting compound. Only one electron trap has been detected within whole experimental temperature range 80 K - 300 K. The concentration of the trap was found to be of the order of 1012 cm-3within the whole barrier region of the junction. The trap behaves very different from the usually observed traps in DLTS experiment. The DLTS peak is asymmetrically broadened and shifts to lower temperatures with increasing width of filling pulse which implies that dislocations are the origin of the trap.
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Ewa Placzek-Popko, Jan Szatkowski, A. Hajdusianek, Ewa Beata Radojewska, "DLTS study in GaAs1-xSbx", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238145; https://doi.org/10.1117/12.238145
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