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8 April 1996 Deep localized state energy distribution in a-Se and a-Si:H layers
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Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238139
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland
Abstract
In this work experimental technique for determination of energy distribution of localized states of charge carries in high-resistance semiconductors as well as its mathematical description have been developed. This method has been applied for determination of energy distribution of electrons and holes in an a-Se layer at the temperature of 170 and 145 K in the energy interval 0.59 - 1.8 eV relative to the conduction edge of the carrier mobility gap. It has been discovered that light with lambda less than 1.06 micrometer generates not only holes, but electrons, too. Peculiarities of electron localization states in an a-Si:H layer at 85 K have been investigated.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Kalade, Edmundas Montrimas, and R. Maldzius "Deep localized state energy distribution in a-Se and a-Si:H layers", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238139
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