8 April 1996 Electrically active defects in Ni-contaminated Cz-Si with oxygen precipitates
Author Affiliations +
Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238141
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland
Abstract
Electrically active defects in preannealed n-type Cz-Si crystals subjected to high-pressure heat treatment were studied by deep level transient spectroscopy (DLTS). Experimental evidence is given that electron traps at Ec - 0.20 eV, Ec - 0.45 eV and Ec - 0.62 eV are presumably related to an oxygen-multivacancy complex, an acceptor level of Ni and a point defect decorating extended defects, respectively.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pawel Kaminski, Pawel Kaminski, Roman Kozlowski, Roman Kozlowski, Andrzej Misiuk, Andrzej Misiuk, } "Electrically active defects in Ni-contaminated Cz-Si with oxygen precipitates", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238141; https://doi.org/10.1117/12.238141
PROCEEDINGS
4 PAGES


SHARE
Back to Top