8 April 1996 FTIR study of oxygen precipitation in high-pressure-treated Cz-Si contaminated by transition metals
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Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238147
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland
Abstract
The influence of metallic contaminants (Ni, Mo) on the oxygen precipitation process during high temperature (HT) treatment under hydrostatic pressure (HP) was studied. No significant influence of Ni and Mo contaminants on the oxygen precipitation process at 1400 K was observed. Changes of interstitial oxygen concentrations c0 after HP-HT treatment for contaminated and for non-contaminated samples were less than 10%. The metallic contaminants (ni, Mo) cause mostly generation of large strain fields in the matrix probably related to metallic precipitates as evidenced by x-ray topography.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Surma, B. Surma, Andrzej Misiuk, Andrzej Misiuk, Malgorzata Mozdzonek, Malgorzata Mozdzonek, Juergen Hartwig, Juergen Hartwig, E. Prieur, E. Prieur, "FTIR study of oxygen precipitation in high-pressure-treated Cz-Si contaminated by transition metals", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238147; https://doi.org/10.1117/12.238147
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