8 April 1996 LBIC investigation of the dynamic behavior of trapping-recombination centers
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Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238144
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland
Abstract
The LBIC method was used to investigate the trapping-recombination centers in GaAs:Si layers grown by MOCVD method. The special test structure was developed and performed. The model which joins the measured signal changes with the presence of trapping centers from substrate (EL2 deep levels) and surface.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bogdan Paszkiewicz, Bogdan Paszkiewicz, A. Romanowski, A. Romanowski, Regina Paszkiewicz, Regina Paszkiewicz, Marek Panek, Marek Panek, Marek J. Tlaczala, Marek J. Tlaczala, Przemyslaw Andrzejewski, Przemyslaw Andrzejewski, } "LBIC investigation of the dynamic behavior of trapping-recombination centers", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238144; https://doi.org/10.1117/12.238144
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