8 April 1996 Mixing in group-V sublattice of GaAs-related crystals
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Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238146
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland
Abstract
III-V mixed crystals are interesting for their application in modern optoelectronics and microwave electronics. Two mixed systems, namely GaAs1-xSbx and GaAs1-x- ySbxPy, were chosen to investigate an influence of gallium phosphite and gallium antimonide added to gallium arsenide on band structure properties and crystal lattice structure.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ewa Beata Radojewska, Ewa Beata Radojewska, Ewa Placzek-Popko, Ewa Placzek-Popko, } "Mixing in group-V sublattice of GaAs-related crystals", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238146; https://doi.org/10.1117/12.238146
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