8 April 1996 Numerical studies of quantum dot electrical transport properties
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Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238154
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland
Abstract
A model of controlled-barrier quantum dot based on GaAs/AlGaAs heterostructure has been considered. The analytic form of potential V(x,y) confining the 2DEG has been assumed. It results from application of two biasing voltages: bottom gate Ug and upper electrode Ub. Schrodinger equation for the model has been solved and on this basis transmission coefficient (T) vs electron energy has been calculated for different values of drain to source voltage. Resonance tunneling results in T equals 1 for eigen values of energy within the quantum well. When Uds increases T decreases below one and shifting of the peaks into the higher energies takes place. Abrupt changes of drain current and peaks in dynamic conductance both versus Uds have also been found for zero temperature. When temperature increases the smearing of steps in the current and broadening of conductance peaks have been observed.
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Stanislaw Pawlowski, Stanislaw Pawlowski, Andrzej Kusy, Andrzej Kusy, Roman Sikora, Roman Sikora, Mariusz Maczka, Mariusz Maczka, Elzbieta Machowska-Podsiadlo, Elzbieta Machowska-Podsiadlo, } "Numerical studies of quantum dot electrical transport properties", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238154; https://doi.org/10.1117/12.238154
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