Photoreflectance spectroscopy for semiconductor structure investigations

Jan Misiewicz

doi:10.1117/12.238143

8 April 1996 Photoreflectance spectroscopy for semiconductor structure investigations

Jan Misiewicz

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238143
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

Photoreflectance spectroscopy as the nondestructive, contactless, room temperature method to investigate semiconductor layers, interfaces, structures and devices is presented. Principles of the method are described. Application to the investigations of the III-V compounds structures, including heterojunction bipolar transistors, high electron mobility transistors vertical cavity surface emitting lasers and quantum dots arrays are shown.

Citation Download Citation

Jan Misiewicz "Photoreflectance spectroscopy for semiconductor structure investigations", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238143

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