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8 April 1996 Polaronic conduction in electron-beam-evaporated Cu-GeO2 thin cermet films
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Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238306
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland
Abstract
Dc conductivity and Hall effect measurements were performed on Cu-GeO2 thin films with the aim of obtaining information about dc conduction mechanism. The conductivity results reveal that the activation energy is temperature dependent, increasing significantly above a btransition temperature Tt. Hall mobility showed a sign reversal around Tt, above which it increased with increasing temperature reaching a maximum at a critical temperature Tc. Above Tt, the conductivity is best described by small polaron hopping model. Below Tt, the Hall mobility shows a significant rise with decreasing temperature, indicating polaronic band conduction mechanism. Various parameters associated with polaronic formation are calculated.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. H. Rahman, A M. Al-Saie, and J. Beynon "Polaronic conduction in electron-beam-evaporated Cu-GeO2 thin cermet films", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238306
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