8 April 1996 Preparation and properties of ferroelectric thin PZT films
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Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238159
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland
Abstract
By means of rf sputtering the ferroelectric thin film of PZT-type with the chemical constitution Pb(Zr0.52Ti0.46W0.01Cd0.01)O3, thickness df equals (1 - 2.5) multiplied by 10-6 m and polycrystalline structure was obtained. Either metallic foils or ceramics were used as substrates. In the case of thin film deposition on steel substrate and platinum at low temperatures (Ts less than 723 K) the nonferroelectric intermediate layer with the same chemical constitution but with the pyrochlore type structure has been created. Structural peculiarities are reflected in anomalous dielectric dependencies of the thin films. Obtained results are considered and discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dionizy Czekaj, Zygmunt Surowiak, Vladimir P. Dudkevich, A. A. Bakirov, "Preparation and properties of ferroelectric thin PZT films", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238159; https://doi.org/10.1117/12.238159
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