Prospect and retrospect of thin films in electronics

Cyril A. Hogarth

doi:10.1117/12.238175

8 April 1996 Prospect and retrospect of thin films in electronics

Cyril A. Hogarth

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238175
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

For the purpose of this review, thin films in electronics are regarded as having thicknesses of up to 5 micrometer. Although films thicker than this can be made and used, the step to thick film technology which involves pastes, screen printing and plasma deposition techniques, is a substantial one where the considerations are primarily technological. Thin films range typically from a few nanometers in thickness as applied in quantum well structures and deposited as thin semiconductor layers using molecular beam epitaxy, to thicker dielectric films up to 1 micrometer thick or even thicker and which are generally deposited by thermal or electron beam evaporation or by a sputtering process. In between we have metal and alloy films used as contacts or conducting overlays in microelectronics as well as semiconductor and insulator thin films used in a wide range of active devices such as transistors, diodes, photocells and electroluminescent layers, and in a variety of sensors. In this connection gas sensing including the use of devices which are sensitive to chosen gases such as sulphur dioxide or toluene vapor for example, can be achieved using specially prepared layers of novel phthalocyanines consisting of a few monolayers deposited by Langmuir-Blodgett technique. From consideration of thin film research strands of recent years some suggestions of the probable developments of thin film assemblies in electronics are made.

Citation Download Citation

Cyril A. Hogarth "Prospect and retrospect of thin films in electronics", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238175

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