18 September 1996 In-situ thin film stress measurement using high-stability portable holographic interferometer
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Proceedings Volume 2782, Optical Inspection and Micromeasurements; (1996) https://doi.org/10.1117/12.250758
Event: Lasers, Optics, and Vision for Productivity in Manufacturing I, 1996, Besancon, France
A stress in thin film SiO2 was detected using high stability portable holographic interferometer. A stress relaxation phenomenon in this film thickness of 0.5 micrometers on Si wafer has been observed. This phenomenon does not exist in film with thickness of 1 micrometers . The advantages of the proposed measured technique and results are discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George Eugene Dovgalenko, M. Shahid Haque, Anatoli Kniazkov, Yuri I. Onischenko, Gregory J. Salamo, Hameed A. Naseem, "In-situ thin film stress measurement using high-stability portable holographic interferometer", Proc. SPIE 2782, Optical Inspection and Micromeasurements, (18 September 1996); doi: 10.1117/12.250758; https://doi.org/10.1117/12.250758


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