18 September 1996 In-situ thin film stress measurement using high-stability portable holographic interferometer
Author Affiliations +
Proceedings Volume 2782, Optical Inspection and Micromeasurements; (1996) https://doi.org/10.1117/12.250758
Event: Lasers, Optics, and Vision for Productivity in Manufacturing I, 1996, Besancon, France
Abstract
A stress in thin film SiO2 was detected using high stability portable holographic interferometer. A stress relaxation phenomenon in this film thickness of 0.5 micrometers on Si wafer has been observed. This phenomenon does not exist in film with thickness of 1 micrometers . The advantages of the proposed measured technique and results are discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George Eugene Dovgalenko, M. Shahid Haque, Anatoli Kniazkov, Yuri I. Onischenko, Gregory J. Salamo, Hameed A. Naseem, "In-situ thin film stress measurement using high-stability portable holographic interferometer", Proc. SPIE 2782, Optical Inspection and Micromeasurements, (18 September 1996); doi: 10.1117/12.250758; https://doi.org/10.1117/12.250758
PROCEEDINGS
5 PAGES


SHARE
RELATED CONTENT

Thin film windows for use in a bulge tester and...
Proceedings of SPIE (June 21 2000)
Magnetically actuated MEMS scanning mirror
Proceedings of SPIE (March 08 1996)
Eutectic bonds on wafer scale by thin film multilayers
Proceedings of SPIE (September 23 1996)
Reciprocating silicon microtribometer
Proceedings of SPIE (January 16 2003)
Chemical-free cleaning using excimer lasers
Proceedings of SPIE (April 08 1996)
Submicron thin film MOM diodes for the detection of 10...
Proceedings of SPIE (October 01 1990)

Back to Top