18 September 1996 Spatially resolved study of Schottkey barriers
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Proceedings Volume 2782, Optical Inspection and Micromeasurements; (1996) https://doi.org/10.1117/12.250789
Event: Lasers, Optics, and Vision for Productivity in Manufacturing I, 1996, Besancon, France
Abstract
We studied the fully-formed (80 angstroms) Pt/GaP and (140 angstroms) Au/GaAs interfaces by scanning near-field optics microscopy, internal photoemission, atomic force microscopy, and by x-ray photoemission electron microscopy. These complementary techniques enabled us to correlate the spatial variations of the diodes transport properties with the chemical and topographic inhomogeneities of the buried metal-semiconductor interfaces.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carlo Coluzza, Carlo Coluzza, J. Almeida, J. Almeida, Tiziana Dell'Orto, Tiziana Dell'Orto, O. Bergossi, O. Bergossi, Michel Spajer, Michel Spajer, Stephane Davy, Stephane Davy, Daniel A. Courjon, Daniel A. Courjon, Antonio Cricenti, Antonio Cricenti, Renato Generosi, Renato Generosi, P. Perfetti, P. Perfetti, G. Faini, G. Faini, } "Spatially resolved study of Schottkey barriers", Proc. SPIE 2782, Optical Inspection and Micromeasurements, (18 September 1996); doi: 10.1117/12.250789; https://doi.org/10.1117/12.250789
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