Quantum well infrared photodetector array grown by MOCVD using GAs/AlGaAS MQW

Grachik H. Avetisyan; Vladimir B. Kulikov; Vitalij P. Kotov; Alexej K. Erkin; Igor Dmitrievich Zalevsky

doi:10.1117/12.238219

8 April 1996 Quantum well infrared photodetector array grown by MOCVD using GAs/AlGaAS MQW

Grachik H. Avetisyan, Vladimir B. Kulikov, Vitalij P. Kotov, Alexej K. Erkin, Igor Dmitrievich Zalevsky

Proceedings Volume 2790, Fifth Conference on Charge-Coupled Devices and CCD Systems; (1996) https://doi.org/10.1117/12.238219
Event: Fifth Conference on Charge-Coupled Devices and CCD Systems, 1995, Krym, Russian Federation

Abstract

Photodetector array fabrication using GaAs/AlGaAs multiple quantum wells, grown by MOCVD is discussed. The array uses X-Y-addressing and is multiplexed by a CCD under through CMOS switches. It has 64 X 64 elements, operates in 8 - 12 mkm spectral interval and provides D* equals 1,5.10¹⁰ W^-1 cm Hz^1/2 at 75 K.

Citation Download Citation

Grachik H. Avetisyan, Vladimir B. Kulikov, Vitalij P. Kotov, Alexej K. Erkin, and Igor Dmitrievich Zalevsky "Quantum well infrared photodetector array grown by MOCVD using GAs/AlGaAS MQW", Proc. SPIE 2790, Fifth Conference on Charge-Coupled Devices and CCD Systems, (8 April 1996); https://doi.org/10.1117/12.238219

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