8 April 1996 Quantum well infrared photodetector array grown by MOCVD using GAs/AlGaAS MQW
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Proceedings Volume 2790, Fifth Conference on Charge-Coupled Devices and CCD Systems; (1996) https://doi.org/10.1117/12.238219
Event: Fifth Conference on Charge-Coupled Devices and CCD Systems, 1995, Krym, Russian Federation
Abstract
Photodetector array fabrication using GaAs/AlGaAs multiple quantum wells, grown by MOCVD is discussed. The array uses X-Y-addressing and is multiplexed by a CCD under through CMOS switches. It has 64 X 64 elements, operates in 8 - 12 mkm spectral interval and provides D* equals 1,5.1010 W-1 cm Hz1/2 at 75 K.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grachik H. Avetisyan, Vladimir B. Kulikov, Vitalij P. Kotov, Alexej K. Erkin, Igor Dmitrievich Zalevsky, "Quantum well infrared photodetector array grown by MOCVD using GAs/AlGaAS MQW", Proc. SPIE 2790, Fifth Conference on Charge-Coupled Devices and CCD Systems, (8 April 1996); doi: 10.1117/12.238219; https://doi.org/10.1117/12.238219
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