24 July 1996 Characteristics of Ta4B/SiC x-ray mask blanks
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Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245215
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan
Abstract
Stress controllability and stress distribution of Ta4B absorber on polished SiC films have been investigated. Dry etching behaviors of Cr and Si02 films have been characterized as etch-masking and etch-stopping materials. Xe gas sputtering was found to be effective to obtain higher stress controllability and more uniform stress distribution for Ta4B film compared to Ar gas sputtering. Cr film has been found to have high etching selectivity of more than 15 to the Ta4B film during the ECR etching with Cl2 gas, which is proven to be suitable for etch-masking and etch-stopping layers of the Ta4B absorber.
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Ryo Ohkubo, Ryo Ohkubo, Tsutomu Shoki, Tsutomu Shoki, Hideaki Mitsui, Hideaki Mitsui, Noromichi Annaka, Noromichi Annaka, Yoichi Yamaguchi, Yoichi Yamaguchi, } "Characteristics of Ta4B/SiC x-ray mask blanks", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245215; https://doi.org/10.1117/12.245215
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