24 July 1996 Chemically amplified resist process for 0.25-μm generation photomasks
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Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245249
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan
Abstract
A chemically amplified (CA) negative electron beam resist process is developed for fabricating 0.25 μm devices 4X magnification reticles. In order to improve a critical dimension (CD) uniformity on reticles, a precise temperature controllability in post exposure baking (PEB) is realized. Dry etching for Cr is also adopted for getting an appropriate pattern fidelity down to submicron on reticles to meet requirements for such as optical proximity effect correction. Under the optimized process conditions, a CD uniformity of 0.016 μm in 3σ is achieved on reticles. A CD linearity of down to 0.8 μm on the reticles is ensured as well. Actual 0.25 μm device reticle production results show that the CD mean variation is controlled within ± 0.040 μm. It is confirmed that an advanced 4X reticle fabrication process for 0.25 μm device generation is realized.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikio Katsumata, Mikio Katsumata, Hiroichi Kawahira, Hiroichi Kawahira, Minoru Sugawara, Minoru Sugawara, Satoru Nozawa, Satoru Nozawa, } "Chemically amplified resist process for 0.25-μm generation photomasks", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245249; https://doi.org/10.1117/12.245249
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