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24 July 1996 Development of advanced process for halftone phase-shift mask fabrication with electron-beam exposure systems
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Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245245
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan
Abstract
A new fabrication process for halftone phase-shift masks (HPSMs) with electron beam writers has been developed for mass production. It has a resist critical dimension (CD) measurement step before dry etching and it gives the determination of etching time using the relationships between CD shift (Chrome CD - resist CD) and overetch ratio. As a result, it shows a good mean CD controllability within a range of 0.03 μm for over 90% of our production HPSMs.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Komada, Masa-aki Kurihara, Shiho Sasaki, Takamitsu Makabe, and Naoya Hayashi "Development of advanced process for halftone phase-shift mask fabrication with electron-beam exposure systems", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245245; https://doi.org/10.1117/12.245245
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