24 July 1996 Evaluation of performance of attenuated phase-shift mask using simulation
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Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245210
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan
Abstract
We evaluated printability of notch defects and accuracy of repaired defects in attenuated phase shift masks (=attenuated PSMs) by using the photo intensity simulation. It is shown that the defect in attenuated PSMs brought about the change in the pattern shape of an aerial image on a wafer and affected on the adjacent pattern. It is necessary to repair notch defects in a straight line pattern in a mask even if the size of the defect is minute, because just a small distortion of the transcribed pattern image is severely judged as a defect. The simulation was executed by the optical conditions of wavelength λ = 248nm, NA = 0.5, coherency σ = 0.3 and masks are 5x reticles. We are obtained the results that it is necessary to repair the defects of the size of 0.5 μm or more. Moreover, when the defect was repaired by the shading part so far, the distortion remained in the transcribed pattern image. We examined what the repaired shape is good to solve this problem.
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Yuhichi Fukushima, Yuhichi Fukushima, Nobuhiko Fukuhara, Nobuhiko Fukuhara, Kohsuke Ueyama, Kohsuke Ueyama, "Evaluation of performance of attenuated phase-shift mask using simulation", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245210; https://doi.org/10.1117/12.245210
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