24 July 1996 Evaluation of phase and transmittance error on deep-UV halftone phase-shift mask
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Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245248
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan
Abstract
The effect of phase shift and transmittance fluctuation in a mask plate have been studied. The differences of these optical properties of halftone phase shift masks result in critical dimension(CD) error on a wafer so that these fluctuation in a plate reduce the process window across the exposure field. In considering CD error budget, such factors as phase shift and transmittance has to be taken into account. To estimate this budget, a set of test masks were fabricated, in which phase shift and transmittance are varied, and the exposures using these masks under the same conditions were performed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Suigen Kyoh, Hideaki Sakurai, Takayuki Iwamatsu, Akiko Yamada, Iwao Higashikawa, "Evaluation of phase and transmittance error on deep-UV halftone phase-shift mask", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245248; https://doi.org/10.1117/12.245248
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