Paper
24 July 1996 Fabrication of dense contact patterns using halftone phase-shifting mask with off-axis illumination
Hyoungjoon Kim, Jongwook Kye, Dae-Yup Lee, Sang-Gyun Woo, Hoyoung Kang, Young-Bum Koh
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Abstract
We have investited the performance of the halftone phase-shifting mask (HT PSM) with various illuminations for contact patterns of different pitches in DUV photo lithography . It was found that illumination could be optimized as a function of the pitch. Highly coherent illumination was the best for isolated contact patterns but it was the worst for extremely dense contact patterns due to optical proximity effect and interference which occurred between the primary peaks and the secondary peaks of neighboring contact holes. For extremely dense contact patterns, off-axis illumination (OAI) was found to be the most appropriate compared to conventional illuminations because extremely dense contact patterns show the optical proximity effects which was observed similarly for equal line and space patterns. We found that HT PSM combined with OAI can be used for fabricating the extremely dense contact patterns of high density devices such as 256M and 1 G bit DRAM.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyoungjoon Kim, Jongwook Kye, Dae-Yup Lee, Sang-Gyun Woo, Hoyoung Kang, and Young-Bum Koh "Fabrication of dense contact patterns using halftone phase-shifting mask with off-axis illumination", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245224
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CITATIONS
Cited by 5 patents.
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KEYWORDS
Photomasks

Semiconducting wafers

Lithographic illumination

Phase shifts

Halftones

Printing

Deep ultraviolet

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