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24 July 1996 (LaNiO3)x(Ta2O5)1-x oxide thin films for attenuated phase-shifting mask blank
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Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245211
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan
Abstract
A feasibility of optical proximity effect correction (OPC) mask manufacturing with a state of the art mask fabrication processing and systems is demonstrated focusing on the 0.25 micrometer devices and 4X reticle generation. For realistic OPC mask fabrication, electron beam (EB) resist processing in terms of CD accuracy, mask defect inspection thoroughness and mask defect repair accuracy are studied in detail. For the positive resist process, EB proximity effect correction is applied in order to improve the linearity to meet required CD specifications. Based on such evaluation, practical criteria for OPC pattern generation are applied into an automatic OPC software. It is verified that by using the software with the criteria given, 0.25 micrometer memory device patterns can be corrected with a sufficient optical lithography imaging performance and a reasonable data volume. It is concluded that manufacturing feasibility of sufficiently effective OPC masks is verified as a result of concurrent development on the mask fabrication and automatic OPC software. Engineering tasks in the future are also proposed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. C. Cheng, T. B. Wu, J. Y. Gan, Laurent C. Tuo, and Jia-Jing Wang "(LaNiO3)x(Ta2O5)1-x oxide thin films for attenuated phase-shifting mask blank", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245211
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