24 July 1996 Recent progress in repair accuracy of the focused ion-beam mask repair system
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Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245221
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan
Abstract
To improve the depth of focus (DOF) of isolated lines, attenuated assist feature (AAF) technique has been proposed; AAFs having more than 20% transmittance were located around an isolated line. In this mask, the transmittance and phase shift angle of AAF as well as its position and width have effects on lithographic performance. In particular, the phase shift angle has strong effect on focus latitude. The performances of two AAF masks (65% transmittance/28 degree phase shift and 40% transmittance/54 degree phase shift) were evaluated by using an NA equals 0.6, sigma- in)/(sigma) out equals 0.42/0.7, i-line stepper. The focus latitude of 0.3 micrometer isolated line became flat around the best focus position with 28 degree phase shift AAFs. In conclusion, we can obtain wide DOF for isolated lines by selecting optimum phase shift angle of AAF.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuo Aita, Kazuo Aita, Anto Yasaka, Anto Yasaka, Tadashi Kitamura, Tadashi Kitamura, Hiroshi Matsumura, Hiroshi Matsumura, Yasushi Satoh, Yasushi Satoh, Hiroshi Nakamura, Hiroshi Nakamura, Junji Fujikawa, Junji Fujikawa, Katsuhide Tsuchiya, Katsuhide Tsuchiya, Shigeru Noguchi, Shigeru Noguchi, } "Recent progress in repair accuracy of the focused ion-beam mask repair system", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); doi: 10.1117/12.245221; https://doi.org/10.1117/12.245221
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