Simulation of x-ray mask displacement by absorber and membrane stress

Tsuneaki Ohta; Shuichi Noda; Masanori Kasai; Hiroshi Hoga

doi:10.1117/12.245214

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24 July 1996 Simulation of x-ray mask displacement by absorber and membrane stress

Tsuneaki Ohta; Shuichi Noda; Masanori Kasai; Hiroshi Hoga

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Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245214
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan

Abstract

X-ray mask displacements were simulated using finite element method in order to estimate the requirements for the stress and stress distribution of the absorber and membranes. The structure of X-ray mask in this simulation was as follows: the substrate was 3inch φ and 2mm thick Si wafer, the membranes were 2μm thick SiN and SiC, absorber thickness was 0.5μm, and window area was 25mm square. The simulations were focused on the film stress, various absorber patterns, such as half pattern of window, line and space patterns, and the influence of backetch.

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Tsuneaki Ohta, Shuichi Noda, Masanori Kasai, and Hiroshi Hoga "Simulation of x-ray mask displacement by absorber and membrane stress", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245214

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