10 June 1996 Effect of local optical excitation on semiconductor heterostructures with 2D electron gas
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Proceedings Volume 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials; (1996); doi: 10.1117/12.242117
Event: International Conference on Coherent and Nonlinear Optics, 1995, St. Petersburg, Russian Federation
Abstract
An effect of local illumination on layered semiconductor heterostructures with 2D electron gas is investigated by measuring the spatial distribution of the photoreflectance and photoluminescence intensity varying the distance between the excitation spot and the probing position.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Sablikov, Oleg A. Ryabushkin, "Effect of local optical excitation on semiconductor heterostructures with 2D electron gas", Proc. SPIE 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials, (10 June 1996); doi: 10.1117/12.242117; http://dx.doi.org/10.1117/12.242117
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KEYWORDS
Semiconductors

Heterojunctions

Optical semiconductors

Aluminum

Optical fibers

Gallium arsenide

Luminescence

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