10 June 1996 Formation of poly-Si films on glass substrates using excimer laser treatments
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Proceedings Volume 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials; (1996); doi: 10.1117/12.242140
Event: International Conference on Coherent and Nonlinear Optics, 1995, St. Petersburg, Russian Federation
Solid phase crystallization process in thin amorphous silicon films on glass substrates was studied with application of excimer laser annealing (ELA) and rapid thermal annealing (RTA) for stimulation of nucleation. Using of ELA allowed to create homogeneous polycrystalline silicon films on glass with grain sizes up to 3 micrometers at temperatures below 550 degree(s)C. Using of RTA reduced the incubation time of nucleation from 100 to 6 hrs. The textured silicon films on glass with predominant orientation (110) and sizes of textured areas up to 30 micrometers were manufactured using the excimer laser stimulation of nucleation. The mechanism of mechanical stresses influence on grain orientation was suggested as well as it was theoretically shown, that internal stresses retard the nucleation process. Deformation addition to chemical potential difference were estimated for nucleation in amorphous silicon as 11.4 meV per nucleated atom. Retardation of crystallization after Ge implantation was observed and it was proposed to be explained within deformation mechanisms.
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M. D. Efremov, V. V. Bolotov, Vladimir A. Volodin, E. A. Lipatnikov, L. I. Fedina, I. G. Neizvestny, "Formation of poly-Si films on glass substrates using excimer laser treatments", Proc. SPIE 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials, (10 June 1996); doi: 10.1117/12.242140; http://dx.doi.org/10.1117/12.242140







Amorphous silicon

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