10 June 1996 Mid-IR nonlinear spectroscopy of low-dimensional semiconductor structures using an OPG
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Proceedings Volume 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials; (1996) https://doi.org/10.1117/12.242127
Event: International Conference on Coherent and Nonlinear Optics, 1995, St. Petersburg, Russian Federation
Abstract
A travelling wave optical parametric generator based on a ZnGeP2 crystal, pumped by an actively mode-locked Cr:Er:YSGG laser ((lambda) equals 2.8 micrometers ) has been used for the study of non-linear-optical phenomena in (InGa)As/(AlGa)As and GaAs/(AlGa)As Multi Quantum Wells (MQWs) which had intersubband absorption features in the range (lambda) approximately 4..10 micrometers . Using a two-color pump-probe scheme a dynamic spectral hole burning effect has been observed for the first time, confirming the inhomogeneous nature of MQW absorption line broadening in these samples.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Konstantin L. Vodopyanov, Christopher C. Phillips, "Mid-IR nonlinear spectroscopy of low-dimensional semiconductor structures using an OPG", Proc. SPIE 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials, (10 June 1996); doi: 10.1117/12.242127; https://doi.org/10.1117/12.242127
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