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10 June 1996 Quasi-zero-dimensional semiconductor structures: optical nonlinearities and hole-burning effects
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Proceedings Volume 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials; (1996) https://doi.org/10.1117/12.242116
Event: International Conference on Coherent and Nonlinear Optics, 1995, St. Petersburg, Russian Federation
Abstract
Population-induced optical nonlinearities and photo-induced spectral hole-burning phenomena in semiconductor nanocrystallites are described. Absorption saturation in small crystallites results in a genuine bleaching in the nanosecond time range with very small non-saturable contribution. In large crystallites exciton-exciton interactions lead to photo-induced blue shift of exciton resonance. Inhomogeneous broadening of absorption spectrum due to size distribution in a quantum dot ensemble results in several hole-burning effects. Along with the transient hole-burning due to absorption saturation the other processes are possible resulting in persistent or irreversible hole burning. The mechanism is proposed of persistent reversible hole-burning based on the local electric field effect due to photoionization or carrier surface localization in the resonantly excited crystallites. Permanent irreversible hole-burning is outlined for which the term `selective photochemistry' is relevant. All phenomena provide a scope of possible applications and at the same time may be used as an effective tool to evaluate intrinsic properties of quantum dots in the inhomogeneously broadened ensembles.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey V. Gaponenko "Quasi-zero-dimensional semiconductor structures: optical nonlinearities and hole-burning effects", Proc. SPIE 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials, (10 June 1996); https://doi.org/10.1117/12.242116
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