12 July 1996 Thermomechanical analysis in directional solidification of CdTe
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Abstract
Thermoelastic calculations for CdTe grown by the vertical Bridgman method are presented. Finite element calculations are verified by some experimental data. Solidification interface velocity, charge temperature and stress distributions are computed for prescribed ampoule withdrawal rates and several ampoule support systems. The support systems include various materials and seed-wafer transition zone geometries. Crystal stress in excess of the critical resolved shear stress is used as the figure of merit to judge the performance of a particular system. Emphasis is focused on the transition region between the seed and wafer. A processing strategy is proposed and desirable support system characteristics are presented.
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Frederick M. Carlson, Frederick M. Carlson, Taipao Lee, Taipao Lee, John C. Moosbrugger, John C. Moosbrugger, David J. Larson, David J. Larson, } "Thermomechanical analysis in directional solidification of CdTe", Proc. SPIE 2809, Space Processing of Materials, (12 July 1996); doi: 10.1117/12.244328; https://doi.org/10.1117/12.244328
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