18 October 1996 High-performance HgCdTe infrared detectors for the GOES long-wave sounder
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GOES long wave sounder (LWS) detector requirements have always pushed the state-of-the-art for longwave detectors operating in the vicinity of 102 K. Performance and yield of acceptable detectors have always been problems and continue to be important issues affecting the performance of instruments of both present and future design. GSFC has been examining new device and operational concepts aimed at producing significant improvements in performance and yield. Our approach has been directed towards mitigating the deleterious effects of operating small geometry HgCdTe PC devices under heavy bias, that is, under minority carrier sweepout, as is typical in conventional LWS detector operation. Specifically, theory indicates that detectors of the new design operating under optimal bias conditions have significantly higher responsivity, lower power dissipation,and lower 1/f noise knees than conventional LWS detectors. In this paper we will describe the new LWS detectors fabricated at GSFC, present detector data, and review the theory of operation of these devices.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert J. Martineau, Kelley Hu, Sridhar Manthripragada, Zhiqing Shi, Carl A. Kotecki, F. A. Peters, Andre S. Burgess, Danny J. Krebs, R. Johnson, David Brent Mott, and Peter K. Shu "High-performance HgCdTe infrared detectors for the GOES long-wave sounder", Proc. SPIE 2812, GOES-8 and Beyond, (18 October 1996); doi: 10.1117/12.254094; https://doi.org/10.1117/12.254094

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