PROCEEDINGS VOLUME 2816
SPIE'S 1996 INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE, ENGINEERING, AND INSTRUMENTATION | 4-9 AUGUST 1996
Infrared Detectors for Remote Sensing: Physics, Materials, and Devices
IN THIS VOLUME

3 Sessions, 17 Papers, 0 Presentations
SPIE'S 1996 INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE, ENGINEERING, AND INSTRUMENTATION
4-9 August 1996
Denver, CO, United States
IR Detector Material Growth
Proc. SPIE 2816, Advances in vapor phase epitaxy of HgCdTe on sapphire and silicon, 0000 (22 October 1996); doi: 10.1117/12.255154
Proc. SPIE 2816, Bond stability and electronic properties of Hg1-xZnxTe solid solutions, 0000 (22 October 1996); doi: 10.1117/12.255164
Proc. SPIE 2816, MBE growth of HgCdTe IR detector structures on Si substrates: recent advances and future prospects, 0000 (22 October 1996); doi: 10.1117/12.255165
Proc. SPIE 2816, PbSnSe-on-Si infrared techniques: improvements in materials and devices, 0000 (22 October 1996); doi: 10.1117/12.255166
Proc. SPIE 2816, IR detection at room temperature using semiconducting YBaCuO, 0000 (22 October 1996); doi: 10.1117/12.255167
Proc. SPIE 2816, Infrared response of silicide Schottky barrier detectors formed from mixed Pt/Ir layers on Si, 0000 (22 October 1996); doi: 10.1117/12.255168
Proc. SPIE 2816, Required composition uniformity of Hg1-xCdxTe substrate for focal plane arrays, 0000 (22 October 1996); doi: 10.1117/12.255169
IR Detector Processing
Proc. SPIE 2816, IR focal planes based on GaInSb/InAs superlattices, 0000 (22 October 1996); doi: 10.1117/12.255170
Proc. SPIE 2816, Improved HgCdTe detectors with novel antireflection coating, 0000 (22 October 1996); doi: 10.1117/12.255155
Proc. SPIE 2816, GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors, 0000 (22 October 1996); doi: 10.1117/12.255156
Proc. SPIE 2816, Effect of CH4/H2 ECR plasma etching on the electrical properties of p-type Hg1-xCdxTe, 0000 (22 October 1996); doi: 10.1117/12.255157
Proc. SPIE 2816, Picosecond InP photoconductors produced by deep implantation of heavy ions, 0000 (22 October 1996); doi: 10.1117/12.255158
Proc. SPIE 2816, Wide spectral response of two-dimensional grating for quantum well infrared detector and wideband bound/quasi-bound QWIPs, 0000 (22 October 1996); doi: 10.1117/12.255159
IR Focal Plane Arrays
Proc. SPIE 2816, Advances in 15-um HgCdTe photovoltaic and photoconductive detector technology for remote sensing, 0000 (22 October 1996); doi: 10.1117/12.255160
Proc. SPIE 2816, Development of a 2D array for 1- to 2.35-um hyperspectral imager, 0000 (22 October 1996); doi: 10.1117/12.255161
Proc. SPIE 2816, ALADDIN: the 1024x1024 InSb array--design, description, and results, 0000 (22 October 1996); doi: 10.1117/12.255162
Proc. SPIE 2816, High-background longwave Si:As IBC 320x240 IR focal plane array, 0000 (22 October 1996); doi: 10.1117/12.255163
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