22 October 1996 Bond stability and electronic properties of Hg1-xZnxTe solid solutions
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Abstract
A comprehensive study of the properties of Hg1-xZnxTe (MZTx) solid solutions is presented which is mainly focussed around x equals 0.15 corresponding to the detection at 10 micrometer. A comparison is done with Hg1-xCdxTe (MCTx). The experimental evidence of the Hg-Te bond strengthening, with ZnTe alloying, is discussed through the atomic bond length distribution, the atomic vibrations and macroscopic properties such as the infrared reflectivity, the low temperature specific heat, the linear thermal expansion coefficient and the hardness. The x dependence of some transitions in the Brillouin zone are compared with those found in MCTx. The conductivity type can be controlled through the concentration of mercury vacancies. The results on p-n conversion are presented using different techniques. This conversion is especially studied as a function of composition. The p type character of ZnTe dominates for x greater than 0.17. Experimental angle resolved photoemission studies (ARXPS) show that simple chemical treatments leave a stoichiometric compound up to the surface which is little damaged. Anodic oxides have been grown on MZT, their composition is deduced from spectroellipsometry. The interface density of states as measured on MIS structures is low but can be reliably weakened with anodic sulfidization.
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Rene' Granger, Robert Triboulet, Serge R. Rolland, "Bond stability and electronic properties of Hg1-xZnxTe solid solutions", Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); doi: 10.1117/12.255164; https://doi.org/10.1117/12.255164
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