22 October 1996 Effect of CH4/H2 ECR plasma etching on the electrical properties of p-type Hg1-xCdxTe
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Abstract
P-type Hg1-xCdxTe epilayers either Hg-vacancy or As doped were etched in CH4/H2 electron cyclotron resonance plasmas and subsequently examined by Hall-effect and thermoelectric measurements with respect to changes of their electrical properties owing to the plasma exposure. The plasma was found to cause conversion from p- to n-type in a subsurface region extending up to 5 micrometer into the etched MCT epilayers. The observed type conversion was rather independent of sample temperature (60 to 100 degrees Celsius) and bias (0 to minus 50 V) and insensitive to the microwave power (100 to 250 W) and the exposure time used for the process. Annealing of the samples in sealed quartz ampules under Hg vapor at 150 to 200 degrees Celsius re- established p-type conduction in the type-converted layers. The type conversion and its reversibility are assumed to be correlated with the in- and outdiffusion of atomic hydrogen which presumably neutralizes the acceptors by the formation of complexes which are stable at temperatures T less than or equal to 100 degrees Celsius.
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Jan W. Baars, Jan W. Baars, R. C. Keller, R. C. Keller, Hans-Joachim Richter, Hans-Joachim Richter, Matthias Seelmann-Eggebert, Matthias Seelmann-Eggebert, "Effect of CH4/H2 ECR plasma etching on the electrical properties of p-type Hg1-xCdxTe", Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); doi: 10.1117/12.255157; https://doi.org/10.1117/12.255157
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