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22 October 1996 IR detection at room temperature using semiconducting YBaCuO
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Abstract
Semiconducting YBaCuO thin films are a candidate for infrared bolometers operating at room temperature without the need for temperature control. Semiconducting YBaCuO thin films were fabricated by rf magnetron sputtering onto silicon substrates at room temperature. Room temperature deposition provides compatibility with CMOS technology to allow for the fabrication of low cost infrared imaging arrays with focal plane signal processing. The temperature coefficient of resistance (TCR) of the thin films was measured to be as high as 4% K-1 over a wide temperature range near 300 K. In this respect, amorphous YBaCuO thin films provided a higher TCR than epitaxial, tetragonal YBa2Cu3O6+x films. The noise voltage at 30 Hz was measured to be typically less than 1 (mu) V/Hz1/2. If the thin films are integrated into a typical air-gap thermal isolation structure, the projected responsivity Rv would be as high as 3.8 multiplied by 105 V/W with 1 (mu) A of current bias providing an estimated detectivity D* of 1.6 multiplied by 109 cm Hz1/2/W at a frame frequency of 30 Hz.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donald P. Butler, Agha Jahanzeb, Pao C. Shan, Christine Mollenkopf Travers, and Zeynep Celik-Butler "IR detection at room temperature using semiconducting YBaCuO", Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); https://doi.org/10.1117/12.255167
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