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22 October 1996 IR focal planes based on GaInSb/InAs superlattices
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Abstract
Infrared detectors based on GaInSb/InAs strained layer superlattices promise focal plane arrays spanning the infrared. Response uniformity and operating temperature are projected to be superior to those of long-wavelength HgCdTe devices, without the low quantum efficiencies of multi- quantum well devices. Operation of such superlattice-based mid- and long-wave infrared detectors has been demonstrated, with zero bias impedances approaching the HgCdTe trend line and high quantum efficiencies. Two color, back-to-back diodes have also been demonstrated for the first time, in a p-n-p triple layer heterojunction. Various passivation approaches have been compared.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard H. Miles and Jerry A. Wilson "IR focal planes based on GaInSb/InAs superlattices", Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); https://doi.org/10.1117/12.255170
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