IR focal planes based on GaInSb/InAs superlattices

Richard H. Miles; Jerry A. Wilson

doi:10.1117/12.255170

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22 October 1996 IR focal planes based on GaInSb/InAs superlattices

Richard H. Miles, Jerry A. Wilson

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Proceedings Volume 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices; (1996) https://doi.org/10.1117/12.255170
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

Infrared detectors based on GaInSb/InAs strained layer superlattices promise focal plane arrays spanning the infrared. Response uniformity and operating temperature are projected to be superior to those of long-wavelength HgCdTe devices, without the low quantum efficiencies of multi- quantum well devices. Operation of such superlattice-based mid- and long-wave infrared detectors has been demonstrated, with zero bias impedances approaching the HgCdTe trend line and high quantum efficiencies. Two color, back-to-back diodes have also been demonstrated for the first time, in a p-n-p triple layer heterojunction. Various passivation approaches have been compared.

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Richard H. Miles and Jerry A. Wilson "IR focal planes based on GaInSb/InAs superlattices", Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); https://doi.org/10.1117/12.255170

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