22 October 1996 PbSnSe-on-Si infrared techniques: improvements in materials and devices
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Abstract
Progress in the development of narrow gap IV-VI-on-Si technology for infrared sensor arrays is reviewed. Epitaxial Pb1-xSnxSe layers, about 4 micrometer thick, are grown by molecular beam epitaxy onto 3 inch Si(111) substrates, and employing an intermediate CaF2 layer of only 2 nm thickness for compatibility reasons. Material quality is improved by proper growth conditions and annealing. Threading dislocation densities as low as 106 cm-2 are obtained in samples with 3 by 3 cm2 size after proper anneal. It seems that glissile threading dislocations sweep out across the edge of the samples, and, in addition, such dislocations are able to react with sessile ones and transform them to glissile. Infrared photodiodes with much higher resistance area products can be obtained which approach the theoretical limit in a certain temperature range with such improved material quality. If the Pb/Pb1-xSnxSe infrared Schottky-barrier sensors are described with a model which allows fluctuations of the barrier height, the saturation of the resistance-area products at low temperatures as well as ideality factors very much greater than 1 are explained, too.
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Hans Zogg, Alexander Fach, Joachim John, Peter Mueller, Carmine Paglino, "PbSnSe-on-Si infrared techniques: improvements in materials and devices", Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); doi: 10.1117/12.255166; https://doi.org/10.1117/12.255166
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