Temperature sensing by band gap optical absorption in semiconductors

Michel F. Sultan; Michael J. O'Rourke

doi:10.1117/12.255352

25 October 1996 Temperature sensing by band gap optical absorption in semiconductors

Michel F. Sultan, Michael J. O'Rourke

Proceedings Volume 2839, Fiber Optic and Laser Sensors XIV; (1996) https://doi.org/10.1117/12.255352
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

A new sensor for measuring high temperature in harsh environments is presented. The sensor concept is based on the fact that the band gap energy of semiconductors, and accordingly the cut-on optical wavelength, depend strongly on temperature. The optical wavelength at which these semiconductors start transmitting light typically increases as the temperature increases. Durable optical fibers transmit light to and from the semiconductive material. This paper addresses the feasibility of the concept at temperatures up to 800 degrees Celsius, and presents results using different semiconductors including gallium arsenide, silicon, and gallium phosphide.

Citation Download Citation

Michel F. Sultan and Michael J. O'Rourke "Temperature sensing by band gap optical absorption in semiconductors", Proc. SPIE 2839, Fiber Optic and Laser Sensors XIV, (25 October 1996); https://doi.org/10.1117/12.255352

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