Direct method (TTL) applied to general planar devices and structures of millimeter waves

Humberto Cesar Chaves Fernandes

doi:10.1117/12.262747

18 December 1996 Direct method (TTL) applied to general planar devices and structures of millimeter waves

Humberto Cesar Chaves Fernandes

Author Affiliations +

Proceedings Volume 2842, Millimeter and Submillimeter Waves and Applications III; (1996) https://doi.org/10.1117/12.262747
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

The direct and concise method of the Transverse Transmission Line (TTL) is applied for the unilateral, antipodal and bilateral finlines asymmetric in the plane-E, with semiconductor substrates, including the conductor thickness. The effective dielectric constant, the attenuation constant, and the characteristic impedance are developed. Some of these structures are applied to devices as coupler and impedance transformer. In the TTL method, the Maxwell's equations in Fourier transform domain, are used to obtain the electromagnetic fields in terms of the transversal electromagnetic fields. By applying the boundary conditions and using the moment method and the Parseval's theorem, an homogeneous equations system is obtained with two variables. The complex propagation constant is obtained by setting the determinant of the system matrix equal to zero. The effective dielectric constant is determined by means of the relation between the phase constant and the wave number of the free space. For evaluating the characteristic impedance, the definition that relates the transmitted power and the voltage across the slots is used. Computer programs are developed in FORTRAN 77 language, and the results in 2D and 3D are obtained using a Pentium microcomputer, of the effective dielectric constant, the attenuation constant, and the characteristic impedance with parameters such as the operating frequency, the thickness of the semiconductor substrate and its conductivity, and the slots widths and their location. These results are compared with references and the agreement is quite good.

Citation Download Citation

Humberto Cesar Chaves Fernandes "Direct method (TTL) applied to general planar devices and structures of millimeter waves", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); https://doi.org/10.1117/12.262747

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE