Paper
18 December 1996 High-performance 38-GHz PHEMT power amplifier MMIC for commercial millimeter wave radio systems
Weiqi Li, Gamal M. Hegazi, Timothy T. Lee, Fred Phelleps
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Abstract
A high performance 38 GHz monolithic pseudomorphic high electron mobility transistor (PHEMT) power amplifier has been developed for commercial millimeter-wave radio systems. This highly integrated MMIC chip has three power PHEMT stages and achieved 25 dBm 1-dB compressed output power with 19 dB power gain using 6V drain-source bias. The MMIC process utilized an optimized power PHEMT structure and has demonstrated high yield with excellent reproducibility making it suitable for high volume commercial applications.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weiqi Li, Gamal M. Hegazi, Timothy T. Lee, and Fred Phelleps "High-performance 38-GHz PHEMT power amplifier MMIC for commercial millimeter wave radio systems", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); https://doi.org/10.1117/12.262785
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KEYWORDS
Amplifiers

Computer aided design

Extremely high frequency

Semiconducting wafers

Device simulation

Microwave radiation

Signal attenuation

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