Paper
18 December 1996 Noise performance of a cryogenically cooled 94-GHz InP MMIC amplifier and radiometer
Todd C. Gaier, Michael D. Seiffert, P. Meinhold, Philip M. Lubin, Michael Sholley, Richard Lai, Huei Wang, Barry R. Allen, Bruce Osgood, Tom R. Block, Po-Hsin P. Liu, Charles M. Jackson, Charles R. Lawrence
Author Affiliations +
Abstract
We have developed an ultra-low noise 94 GHz MMIC amplifier using InGaAs/InAlAs/InP transistor technology. The MMIC designs incorporate a single transistor stage with input and output matching networks as well as gate and drain bias networks. Two MMICs have been incorporated into a single housing providing 10 dB of gain. At room temperature, the integrated amplifier has a measured noise of 365 K at 94 GHz. Cryogenic measurements have been performed using a direct detection total power radiometer with all amplification provided by MMIC amplifiers. The noise figure for the entire radiometer has been measured to be 78 K. The noise figure for the cryogenic InP MMIC 2-stage amplifier unit has been measured to be 51 K with a low power consumption of 0.84 mW per stage. The stability of the radiometer with a 4 GHz bandwidth, is characterized by a power spectrum with a '1/f knee' frequency of 45 Hz.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Todd C. Gaier, Michael D. Seiffert, P. Meinhold, Philip M. Lubin, Michael Sholley, Richard Lai, Huei Wang, Barry R. Allen, Bruce Osgood, Tom R. Block, Po-Hsin P. Liu, Charles M. Jackson, and Charles R. Lawrence "Noise performance of a cryogenically cooled 94-GHz InP MMIC amplifier and radiometer", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); https://doi.org/10.1117/12.262791
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Amplifiers

Radiometry

Cryogenics

Field effect transistors

Temperature metrology

Waveguides

Gallium arsenide

RELATED CONTENT

Further evaluation of GaAs FETs for cryogenic readout
Proceedings of SPIE (October 20 1993)
Cryogenic MOST for focal plane readout electronics
Proceedings of SPIE (September 14 1998)
Low-noise InP HEMT amplifier
Proceedings of SPIE (September 28 2004)

Back to Top