Preliminary test results of a resonant Ge:Ga far-infrared photoconductor

Jam Farhoomand; Bill Knowlton; Robert E. McMurray Jr.; Eugene E. Haller

doi:10.1117/12.262760

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18 December 1996 Preliminary test results of a resonant Ge:Ga far-infrared photoconductor

Jam Farhoomand, Bill Knowlton, Robert E. McMurray Jr., Eugene E. Haller

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Proceedings Volume 2842, Millimeter and Submillimeter Waves and Applications III; (1996) https://doi.org/10.1117/12.262760
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

Theoretical analysis indicates that resonant infrared photoconductors can achieve unit quantum efficiency at resonant frequencies. This concept, which is based on establishing a resonant absorption cavity internal to the detector element, offers numerous other enhancements and advantages over conventional detectors. Here, we present an overview of the operation of the device and outline the fabrication process of a Ge:Ga far-IR photoconductor. The preliminary test results performed on a prototype Ge:Ga detector show the expected resonant fringes with enhanced response. The summary of the results and the status of the project will be discussed.

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Jam Farhoomand, Bill Knowlton, Robert E. McMurray Jr., and Eugene E. Haller "Preliminary test results of a resonant Ge:Ga far-infrared photoconductor", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); https://doi.org/10.1117/12.262760

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