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28 October 1996 Harmonic generation in the reflection of microwave radiation from semiconductor surface
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Abstract
Nonlinear reflection of radiation in the range of 0.3 - 5 mm from semiconductor surfaces is analyzed. When external field (including wave field) influences the semiconductor charge carries, the carriers temperature increases in comparison with the lattice one. As a result, the time interval of the pulse relaxation and, consequently, the dielectric constant varies. Thus, the heating of the carriers by the microwave radiation field leads to the dependence of reflection coefficient on the field, i.e., to the generation of harmonics. Analytical and numerical estimations of the harmonic generation efficiency are carried out. An interesting effect of the generation efficiency decrease under the wave amplitude increase is discovered. This is explained by the fact that the wave frequency is close to the resonant frequency of the plasma free carriers.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew V. Shepelev, M. Y. Glotova, and Alexander V. Shvartsburg "Harmonic generation in the reflection of microwave radiation from semiconductor surface", Proc. SPIE 2843, Intense Microwave Pulses IV, (28 October 1996); https://doi.org/10.1117/12.255404
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