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22 November 1996 Modulation characteristics of injection-locked laser diodes
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Injection locking of a semiconductor laser can induce major changes in the modulation characteristics of the laser. A small signal analysis using the lumped-element model shows that both the frequency and damping of the characteristic resonances of the coupled complex field and free carriers (gain medium) are modified. The detuning between the injected field and the free-running oscillating field, the amplitude of the injection field relative to the free- running field, the linewidth enhancement factor, the cavity photon and spontaneous carrier decay rates, and the field enhancement of the decay rate are all key parameters in determining the changes to the modulation characteristics. For a broad range of parameters, there is simultaneous enhancement of the modulation bandwidth and stable, locked operation. The enhancement requires that the frequency of the locking field be detuned from the injection-modified frequency of the cavity resonance. This causes a resonant enhancement of the modulation sideband associated with the preferred frequency of the optical cavity. Bandwidth enhancements beyond the free-running laser limit are possible over a range of injection levels and injection frequency detunings.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas B. Simpson and Jia-ming Liu "Modulation characteristics of injection-locked laser diodes", Proc. SPIE 2844, Photonics and Radio Frequency, (22 November 1996);

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