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22 November 1996 Novel planar electroabsorption waveguide modulator for rf applications
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Abstract
Planar electroabsorption InP/InGaAsP waveguide modulators suitable for RF applications have been fabricated using the photoelastic effect. The planar device structure is achieved by using WNi thin film surface stressors for lateral waveguiding and helium implantation for electrical isolation between devices. These are the first reported frequency measurements on a photoelastic InP/InGaAsP waveguide modulator.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qizhi Z. Liu, Robert B. Welstand, Richard Joseph Orazi, Stephen A. Pappert, Paul K. L. Yu, and S. S. Lau "Novel planar electroabsorption waveguide modulator for rf applications", Proc. SPIE 2844, Photonics and Radio Frequency, (22 November 1996); https://doi.org/10.1117/12.259023
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