Magnetoresistance In IV-VI Semiconductors

J. B. Restorff; B. B. Houston

doi:10.1117/12.965792

11 June 1981 Magnetoresistance In IV-VI Semiconductors

J. B. Restorff, B. B. Houston

Proceedings Volume 0285, Infrared Detector Materials; (1981) https://doi.org/10.1117/12.965792
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States

Abstract

A brief outline is given of some of the more important magnetoresistance effects seen in the IV-VI semiconductors. In addition, an interesting strong magnetic field magnetoresistance phenomenon is exhibited and the use of weak-field magnetoresistance to examine strain in thin film samples is presented in more detail. Data showing the effects discussed are given using PbTe thin films as examples.

Citation Download Citation

J. B. Restorff and B. B. Houston "Magnetoresistance In IV-VI Semiconductors", Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); https://doi.org/10.1117/12.965792

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