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11 June 1981 Slider Liquid-Phase Epitaxy (LPE) Of Hg1-xCdxTe
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Proceedings Volume 0285, Infrared Detector Materials; (1981) https://doi.org/10.1117/12.965797
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States
Abstract
We describe the Liquid Phase Epitaxial (LPE) growth of p-Hgl-xCdxTe on CdTe substrates up to 2cm x 3cm in area, using an atomospheric pressure slider with a tellurium-rich growth liquid. Controlled growth of Hgl-x CdxTe with x values of 0.2, 0.3, and 0.4 will be described, and measurements presented on the morphology and semiconductor characteristics of the grown layers.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. L. Schmit, R. J. Hager, and R. A. Wood "Slider Liquid-Phase Epitaxy (LPE) Of Hg1-xCdxTe", Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); https://doi.org/10.1117/12.965797
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