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30 September 1996 Transient photoconductivity and light-activated p-n junction device based on bilayer-substituted polythiophene derivatives
Yaron Greenwald, Jorge M. Poplawski, Eitan A. Ehrenfreund, Shammai Speiser
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Abstract
We have studied acceptor substituted poly(3-butyl)thiophene in an attempt to examine the role of acceptor molecules as intrinsic charge traps under light excitations by measuring the transient photoconductivity response following pulse excitation. The specially synthesized acceptor molecule is a chemically prepared high electron affinity (HEA) monomer, 1- (4-nitrophenyl)-2-(3-thienyl) ethene. In the co-polymers prepared with this acceptor monomer we have observed a simultaneous decrease of the sub-nanosecond photoconductivity and increase of the slow component is attributed to a bimolecular recombination process. A new photoinduced current rectifier based on an all-organic donor-acceptor bilayer substituted polythiophene derivative is described. Under visible and UV illumination, a p-n junction is formed leading to current rectification. Maximum photo-rectified current is obtained at approximately 400 nm, with a sharp decrease at shorter wavelengths. This sharp decrease indicates that photons with energy higher than 3.1 eV quench the light activation of this bilayer device.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yaron Greenwald, Jorge M. Poplawski, Eitan A. Ehrenfreund, and Shammai Speiser "Transient photoconductivity and light-activated p-n junction device based on bilayer-substituted polythiophene derivatives", Proc. SPIE 2851, Photopolymer Device Physics, Chemistry, and Applications III, (30 September 1996); https://doi.org/10.1117/12.251818
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KEYWORDS
Polymers

Electrodes

Molecules

Quenching (fluorescence)

Aluminum

Diodes

Ions

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