22 November 1996 Ultraprecision grinding of chemical vapor deposited silicon carbide mirrors for synchrotron radiation
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Abstract
Chemically vapor deposited silicon carbide (CVD-SiC) is the most important material of mirrors for high-brightness synchrotron radiation beamlines, though the material is too difficult to be machined. It takes quite a long time to polish SiC substrate to make mirrors. This paper intends to reduce the machining time to make CVD-SiC mirrors by using ultra-precision grinding technology. The CVD-SiC sample has been ground into 0.4 nm rms in surface roughness by a resinoid-bonded diamond wheel and an ultra-precision surface grinder having a glass-ceramic spindle of extremely-low thermal expansion. The surface roughness of ground samples were measured with TOPO-3D and AFM. 88.7% reflectivity has been obtained on the ground CVD-SiC flat surface, measured with X-ray of 0.834 nm in wavelength at the grazing incidence angle of 0.7 - 0.95 degree. The reflectivity depends upon the angle between the direction of incident beam and grinding marks on the sample. The relationship between the surface roughness and grinding conditions was also discussed.
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Yoshiharu Namba, Yoshiharu Namba, } "Ultraprecision grinding of chemical vapor deposited silicon carbide mirrors for synchrotron radiation", Proc. SPIE 2856, Optics for High-Brightness Synchrotron Radiation Beamlines II, (22 November 1996); doi: 10.1117/12.259864; https://doi.org/10.1117/12.259864
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