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19 July 1996 Gain and noise in very high-gain avalanche photodiodes: theory and experiment
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Abstract
Large area silicon avalanche photodiodes have been fabricated with maximum avalanche gains exceeding 10,000 and excellent signal to noise ratios. A model of device performance has been developed in which previously developed general expressions are numerically integrated using actual fabrication parameters. The gain, statistical fluctuations in the gain, electronic noise, and total peak broadening have been computed using this model. The results are in good agreement with measurements. The parameter keff was found to be 7.2 X 10-4, allowing a high signal to noise ratio at gains of several thousand.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert H. Redus and Richard Farrell "Gain and noise in very high-gain avalanche photodiodes: theory and experiment", Proc. SPIE 2859, Hard X-Ray/Gamma-Ray and Neutron Optics, Sensors, and Applications, (19 July 1996); https://doi.org/10.1117/12.245118
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