19 July 1996 Interferometric analysis of strained thin silicon films
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Abstract
With the aim to characterize mechanical properties of thin films, a widely micromechanic test, bulging, is associated with two contactless and noninvasive optical methods, holographic interferometry and projected fringes. These two complementary processes are combined with phase measurement interferometry to get out-of-plane displacements. These solutions are discussed in terms of accuracy and sensitivity. An application is presented on single crystal silicon. Experimental values are compared to results obtained with finite element modeling. Considering the same principle, measurement shapes are performed on multi-layer membranes to analyze residual stresses.
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Bertrand Trolard, Gilbert M. Tribillon, Eric Bonnotte, Patrick Delobelle, Luc Bornier, "Interferometric analysis of strained thin silicon films", Proc. SPIE 2861, Laser Interferometry VIII: Applications, (19 July 1996); doi: 10.1117/12.245165; https://doi.org/10.1117/12.245165
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KEYWORDS
Silicon

Holographic interferometry

Finite element methods

Holograms

Interferometry

Phase measurement

Silicon films

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