19 July 1996 Interferometric analysis of strained thin silicon films
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With the aim to characterize mechanical properties of thin films, a widely micromechanic test, bulging, is associated with two contactless and noninvasive optical methods, holographic interferometry and projected fringes. These two complementary processes are combined with phase measurement interferometry to get out-of-plane displacements. These solutions are discussed in terms of accuracy and sensitivity. An application is presented on single crystal silicon. Experimental values are compared to results obtained with finite element modeling. Considering the same principle, measurement shapes are performed on multi-layer membranes to analyze residual stresses.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bertrand Trolard, Gilbert M. Tribillon, Eric Bonnotte, Patrick Delobelle, Luc Bornier, "Interferometric analysis of strained thin silicon films", Proc. SPIE 2861, Laser Interferometry VIII: Applications, (19 July 1996); doi: 10.1117/12.245165; https://doi.org/10.1117/12.245165

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